Resistance switching induced by electric fields in manganite thin films
نویسندگان
چکیده
منابع مشابه
Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films
The electric-pulse-induced resistance switching in layered structures composed of polycrystalline Pr1-xCaxMnO3 (PCMO) sandwiched between Pt bottom electrode and top electrodes of various metals (metal/PCMO/Pt) was studied by direct current current-voltage (I-V) measurements and alternating current impedance spectroscopy. The I-V characteristics showed nonlinear, asymmetric, and hysteretic behav...
متن کاملColossal magnetoresistive manganite thin films
Mixed-valence perovskite manganites (Re 1−x A x MnO 3 where Re=rare earth, A=alkaline earth) provide a unique opportunity to study the relationships between the structure and the magnetotransport properties due to an interplay among charge carriers, magnetic coupling, orbital ordering and structural distortion. This makes these compounds very exciting from both the basic research and from the t...
متن کاملInvestigation of resistive switching in anodized titanium dioxide thin films
In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications. Increasing anodizing duration will increase nanotube lengths which itself c...
متن کاملElectromagnetically induced switching of ferroelectric thin films
We analyze the interaction of an electromagnetic spike (one cycle) with a thin layer of ferroelectric medium with two equilibrium states. The model is the set of Maxwell equations coupled to the undamped LandauKhalatnikov equation, where we do not assume slowly varying envelopes.
متن کاملConductivity and switching phenomena in Mn-doped perovskite single crystals and manganite thin films
For better understanding of the charge-transport mechanisms in perovskite manganites, along with colossal magnetoresistance ~CMR! materials, such as La12xSrxMnO3, we study systems with decreased content of Mn ions, such as single crystals of LaGa12xMnxO3 (0,x,0.5). The conductivity of all the systems in study can be described adequately with a nonadiabatic approximation of the hopping model wit...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2007
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/59/1/104